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March 2007
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HCTS14MS
Radiation Hardened HEX Inverting Schmitt Trigger
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14 TOP VIEW
A1 1 Y1 2 A2 3 Y2 4 A3 5 Y3 6 GND 7 14 VCC 13 A6 12 Y6 11 A5 10 Y5 9 A4 8 Y4
Features
* 3 Micron Radiation Hardened SOS CMOS * Total Dose 200K RAD (Si) * SEP Effective LET No Upsets: >100 MEV-cm2/mg * Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) * Dose Rate Survivability: >1 x 1012 RAD (Si)/s * Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse * Cosmic Ray Upset Rate 2 x 10 Errors/Bit Day * Latch-Up Free Under Any Conditions * Military Temperature Range: -55oC to +125oC * Significant Power Reduction Compared to LSTTL ICs * DC Operating Voltage Range: 4.5V to 5.5V * Input Current Levels Ii 5A at VOL, VOH
-9
Description
The Intersil HCTS14MS is a Radiation Hardened HEX Inverting Schmitt trigger. A high on any input forces the output to a Low state. The HCTS14MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCTS14MS is supplied in a 14 lead Ceramic flatpack Package (K suffix) or a 14 lead SBDIP Package (D suffix).
A1 Y1 A2 Y2 A3 Y3 GND
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP3-F14 TOP VIEW
1 2 3 4 5 6 7 14 13 12 11 10 9 8 VCC A6 Y6 A5 Y5 A4 Y4
TRUTH TABLE
Ordering Information
PART NUMBER HCTS14DMSR TEMPERATURE RANGE -55oC to +125oC -55oC to +125oC +25oC +25oC +25oC SCREENING LEVEL Intersil Class S Equivalent Intersil Class S Equivalent Sample PACKAGE 14 Lead SBDIP
INPUTS An L H
OUTPUTS Yn H L
HCTS14KMSR
14 Lead Ceramic Flatpack 14 Lead SBDIP
NOTE: L = Logic Level Low, H = Logic level High
HCTS14D/ Sample HCTS14K/ Sample HCTS14HMSR
Functional Diagram
An Yn
Sample
14 Lead Ceramic Flatpack Die
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a trademark of Intersil Americas Inc. Copyright (c) Intersil Americas Inc. 2002, 2007. All Rights Reserved
Spec Number 1 FN
518607 3205.2
DB NA
Specifications HCTS14MS
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . . 10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . . 25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10sec). . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance JA JC SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W Maximum Package Power Dissipation at +125oC Ambient SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.66W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/oC Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/oC
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . Unlimited Max Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.5V Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (NOTE 1) CONDITIONS VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0V VCC = 4.5V, VIH = 2.25V, IOL = 50A, VIL = 0.5V VCC = 5.5V, VIH = 2.75V, IOL = 50A, VIL = 0.5V Output Voltage High VOH VCC = 4.5V, VIH = 2.25V, IOH = -50A, VIL = 0.5V VCC = 5.5V, VIH = 2.75V, IOH = -50A, VIL = 0.5V Input Leakage Current Noise Immunity Functional Test NOTES: 1. All voltages reference to device GND. 2. For functional tests, VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0". IIN VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIH = 2.25V, VIL = 0.5V GROUP A SUBGROUPS 1 2, 3 1 2, 3 1 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1 2, 3 7, 8A, 8B LIMITS TEMPERATURE +25oC +125oC, -55oC MIN 4.8
o
PARAMETER Quiescent Current
SYMBOL ICC
MAX 10 200 0.1 0.1 0.5 5.0 0.5
UNITS A A mA mA mA mA V V V V A A V
Output Current (Sink) Output Current (Source) Output Voltage Low
IOL
+25oC +125 C, -55 C +25oC +125oC, -55oC
o
4.0 -4.8 -4.0 VCC -0.1 VCC -0.1 -0.5 -5.0
o
IOH
VOL
+25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +125oC, +25o -55oC
o
FN
C, +125 C, -55 C
4.0
Spec Number 2
518607
Specifications HCTS14MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS (NOTES 1, 2) CONDITIONS VCC = 4.5V, VIH = 3.0V, VIL = 0V VCC = 4.5V, VIH = 3.0V, VIL = 0V VCC = 4.5V GROUP A SUBGROUPS 9 10, 11 9 10, 11 9 10, 11 VTVCC = 4.5V 9 10, 11 VH VCC = 4.5V 9 10, 11 NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V. LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC MIN 2 2 2 2 0.5 0.5 0.5 0.5 0.1 0.1 MAX 19 21 25 26 2.25 2.25 2.25 2.25 1.40 1.40 UNITS ns ns ns ns V V V V V V
PARAMETER Propagation Delay
SYMBOL TPHL
TPLH
Input Switch Point
VT+
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Capacitance Power Dissipation Input Capacitance SYMBOL CPD CONDITIONS VCC = 5.0V, VIH = 5.0V, VIL = 0V, f = 1MHz VCC = 5.0V, VIH = 5.0V, VIL = 0V, f = 1MHz VCC = 4.5V, VIH = 4.5V, VIL = 0V NOTES 1 1 1 1 1 1 TEMPERATURE +25oC +125oC, -55oC +25oC +125oC +25oC +125oC MIN MAX 26 39 10 10 15 22 UNITS pF pF pF pF ns ns
CIN
Output Transition Time NOTE:
TTHL TTLH
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (NOTES 1, 2) CONDITIONS VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V VCC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V VCC = 4.5V and 5.5V, VIH = VCC/2 VIL = 0.4V at 200K RAD, IOL = 50A 200K RAD LIMITS TEMPERATURE +25
oC
PARAMETER Quiescent Current Output Current (Sink) Output Current (Source) Output Voltage Low
SYMBOL ICC IOL IOH VOL
MIN 4.0 -4.0 -
MAX 0.2 0.1
UNITS mA mA mA V
+25o
C
+25oC +25oC
Spec Number 3
518607
Specifications HCTS14MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) (NOTES 1, 2) CONDITIONS VCC = 4.5V and 5.5V, VIH = VCC/2, VIL = 0.4V at 200K RAD, IOH = -50A VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIH = 2.25V, VIL = 0.4V at 200K RAD, (Note 3) VCC = 4.5V VCC = 4.5V VCC = 4.5 VCC = 4.5 VCC = 4.5 200K RAD LIMITS TEMPERATURE +25oC MIN VCC -0.1 MAX UNITS V
PARAMETER Output Voltage High
SYMBOL VOH
Input Leakage Current Noise Immunity Functional Test Propagation Delay
IIN FN TPHL TPLH
+25oC +25
oC
2 2 0.40 0.40 0.10
5 21 31 2.25 2.25 1.40
A ns ns V V V
+25oC +25oC +25oC +25oC +25oC
Input Switch Points
VT+ VTVH
NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. 3. For functional tests, VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP B SUBGROUP 5 5
PARAMETER ICC IOL/IOH
DELTA LIMIT 3A -15% of 0 Hour
TABLE 6. APPLICABLE SUBGROUPS GROUP A SUBGROUPS CONFORMANCE GROUPS Initial Test Interim Test PDA Final Test Group A (Note 1) Subgroup B5 Subgroup B6 Group D NOTES: 1. Alternate Group A testing in accordance with MIL-STD-883 Method 5005 may be exercised. 2. Table 5 parameters only. MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 100% 5004 Sample 5005 Sample 5005 Sample 5005 Sample 5005 TESTED FOR -Q 1, 7, 9 1, 7, 9, 1, 7, 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, 1, 7, 9 1, 7, 9 1, 2, 3, (Note 2) RECORDED FOR -Q 1 (Note 2) 1, (Note 2)
Spec Number 4
518607
Specifications HCTS14MS
TABLE 7. TOTAL DOSE IRRADIATION TEST CONFORMANCE GROUPS Group E Subgroup 2 NOTE: 1. Except FN test which will be performed 100% Go/No-Go. METHOD 5005 PRE RAD 1, 7, 9 POST RAD Table 4 READ AND RECORD PRE RAD 1, 9 POST RAD Table 4 (Note 1)
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 1/2 VCC = 3V 0.5V VCC = 6V 0.5V 50kHz 25kHz
STATIC BURN-IN I TEST CONDITIONS (Note 1) 2, 4, 6, 8, 10, 12 1, 3, 5, 7, 9, 11, 13 14 -
STATIC BURN-IN II TEST CONNECTIONS (Note 1) 2, 4, 6, 8, 10, 12 7 1, 3, 5, 9, 11, 13, 14 -
DYNAMIC BURN-IN I TEST CONNECTIONS (Note 2) NOTES: 1. Each pin except VCC and GND will have a resistor of 10k 5% for static burn-in. 2. Each pin except VCC and GND will have a resistor of 1k 5% for dynamic burn-in. 7 2, 4, 6, 8, 10, 12 14 1, 3, 5, 9, 11, 13 -
TABLE 9. IRRADIATION TEST CONNECTIONS OPEN 2, 4, 6, 8, 10, 12 GROUND 7 VCC = 5V 0.5V 1, 3, 5, 9, 11, 13, 14
NOTE: Each pin except VCC and GND will have a resistor of 47k 5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number 5
518607
HCTS14MS Intersil Space Level Product Flow - `MS'
Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method 2011 Sample - Die Shear Monitor, Method 2019 or 2027 100% Internal Visual Inspection, Method 2010, Condition A 100% Temperature Cycle, Method 1010, Condition C, 10 Cycles 100% Constant Acceleration, Method 2001, Condition per Method 5004 100% PIND, Method 2020, Condition A 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In 1, Condition A or B, 24 hrs. min., +125oC min., Method 1015
NOTES: 1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1. 2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 5. Data Package Contents: * Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quantity). * Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage. * GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil. * X-Ray report and film. Includes penetrometer measurements. * Screening, Electrical, and Group A attributes (Screening attributes begin after package seal). * Lot Serial Number Sheet (Good units serial number and lot number). * Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. * The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative.
100% Interim Electrical Test 1 (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Interim Electrical Test 2 (T2) 100% Delta Calculation (T0-T2) 100% PDA 1, Method 5004 (Notes 1 and 2) 100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or Equivalent, Method 1015 100% Interim Electrical Test 3 (T3) 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (Note 2) 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% Radiographic, Method 2012 (Note 3) 100% External Visual, Method 2009 Sample - Group A, Method 5005 (Note 4) 100% Data Package Generation (Note 5)
Spec Number 6
518607
HCTS14MS AC Timing Diagrams
VIH VS VIL TPLH VOH VS VOL TTLH 80% 20% 80% 20% TTHL VCC VI GND VCC VO GND VH VT+ OUTPUT VTVT+ VTVI TPHL INPUT VO
Hysteresis Definition, Characteristic and Test Setup
VH VH = VT+ - VT-
VOH
VOL
OUTPUT
FIGURE 1
AC VOLTAGE LEVELS PARAMETER VCC VIH VS VIL GND HCTS 4.50 3.00 1.30 0 0 UNITS V V V V V
FIGURE 2
AC Load Circuit
DUT TEST POINT CL
RL
CL = 50pF RL = 500
FIGURE 3
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Spec Number 7
518607
HCTS14MS Die Characteristics
DIE DIMENSIONS: 87 x 88 mils 2,20 x 2.24mm METALLIZATION: Type: AlSi Metal Thickness: 11kA 1kA GLASSIVATION: Type: SiO2 Thickness: 13kA 2.6kA WORST CASE CURRENT DENSITY: <2.0 x 105A/cm2 BOND PAD SIZE: 100m x 100m 4 x 4 mils
Metallization Mask Layout
HCTS14MS
A1 (1) VCC (14) A6 (13)
Y1 (2)
(12) Y6
A2 (3)
(11) A5
Y2 (4)
(10) Y5
A3 (5)
(9) A4
(6) Y3
(7) GND
(8) Y4
NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The mask series for the HCTS14 is TA14443A.
Spec Number 8
518607

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